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INCHANGE

FCP190N65S3 Datasheet Preview

FCP190N65S3 Datasheet

N-Channel MOSFET

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isc N-Channel MOSFET Transistor
·FEATURES
·With TO-220 packaging
·High speed switching
·Very high commutation ruggedness
·Easy to use
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operationz
·APPLICATIONS
·PFC stages
·LCD & PDP TV
·Power supply
·Switching applications
INCHANGE Semiconductor
FCP190N65S3
·ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
650
VGSS
ID
IDM
Gate-Source Voltage
Drain Current-Continuous@TC=25
TC=100
Drain Current-Single Pulsed
±30
17
11
42.5
PD
Total Dissipation
144
Tj
Operating Junction Temperature
-55~150
Tstg
Storage Temperature
-55~150
UNIT
V
V
A
A
W
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth(ch-c) Channel-to-case thermal resistance
Rth(ch-a) Channel-to-ambient thermal resistance
MAX
0.87
62.5
UNIT
/W
/W
isc websitewww.iscsemi.cn
1 isc & iscsemi is registered trademark




INCHANGE

FCP190N65S3 Datasheet Preview

FCP190N65S3 Datasheet

N-Channel MOSFET

No Preview Available !

isc N-Channel MOSFET Transistor
INCHANGE Semiconductor
FCP190N65S3
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP MAX UNIT
BVDSS
Drain-Source Breakdown Voltage VGS=0V; ID= 1mA
VGS(th)
Gate Threshold Voltage
VDS=±30V; ID=1.7mA
RDS(on)
Drain-Source On-Resistance
VGS= 10V; ID=8.5A
IGSS
Gate-Source Leakage Current
VGS= ±30V;VDS= 0V
IDSS
Drain-Source Leakage Current
VDS= 650V; VGS= 0V
VSDF
Diode forward voltage
ISD=8.5A, VGS = 0 V
650
V
2.5
4.5
V
159 190
mΩ
±0.1 μA
1
μA
1.2
V
NOTICE
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not designed
for use in equipment which require specialized quality and/or reliability, or in equipment which
could have applications in hazardous environments, aerospace industry, or medical field. Please
contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
isc websitewww.iscsemi.cn
2 isc & iscsemi is registered trademark



Part Number FCP190N65S3
Description N-Channel MOSFET
Maker INCHANGE
Total Page 2 Pages
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