FDB8880
FDB8880 is N-Channel MOSFET manufactured by Inchange Semiconductor.
FEATURES
- With TO-263 packaging
- Drain Source Voltage-
: VDSS ≥ 30V
- Static drain-source on-resistance:
RDS(on) ≤ 116mΩ@VGS=10V
- 100% avalanche tested
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
- APPLICATIONS
- Power supply
- Switching applications
- ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage
VGSS
Gate-Source Voltage
±20
Drain Current-Continuous;@Tc=25℃
Total Dissipation
Tj
Operating Junction Temperature
-55~175 ℃
Tstg
Storage Temperature
-55~175 ℃
- THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth(ch-c) Channel-to-case thermal resistance
MAX...
