FDB8880 - N-Channel MOSFET

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Datasheet Details

With TO-263 packaging.
Drain Source Voltage- : VDSS ≥ 30V.
Static drain-source on-resistance: RDS(on) ≤ 116mΩ@VGS=10V.
100% avalanche tested.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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