FDH3632 Overview
Key Features
- With TO-247 packaging
- Drain Source Voltage- : VDSS ≥100V
- Static drain-source on-resistance: RDS(on) ≤ 9mΩ@VGS=10V
- 100% avalanche tested
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
| Part | FDH3632 |
|---|---|
| Description | N-Channel MOSFET |
| Category | MOSFET |
| Manufacturer | Inchange Semiconductor |
| Size | 356.32 KB |
Related Datasheets
| Part Number | Manufacturer | Description |
|---|---|---|
| FDH3632 | onsemi | 100V 80A N-Channel MOSFET |
| FDH3632 | Fairchild Semiconductor | N-Channel MOSFET |