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FDH50N50 - N-Channel MOSFET

Datasheet Summary

Features

  • With TO-247 packaging.
  • With low gate drive requirements.
  • Easy to drive.
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Datasheet preview – FDH50N50

Datasheet Details

Part number FDH50N50
Manufacturer INCHANGE
File Size 234.25 KB
Description N-Channel MOSFET
Datasheet download datasheet FDH50N50 Datasheet
Additional preview pages of the FDH50N50 datasheet.

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Full PDF Text Transcription

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isc N-Channel MOSFET Transistor ·FEATURES ·With TO-247 packaging ·With low gate drive requirements ·Easy to drive ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 500 VGSS Gate-Source Voltage ±20 ID Drain Current-Continuous 48 IDM Drain Current-Single Pulsed 192 PD Total Dissipation 625 Tj Operating Junction Temperature -55~150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance MAX 0.2 UNIT ℃/W FDH50N50 isc website：www.iscsemi.
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