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FDH50N50_F133 - N-Channel MOSFET

Download the FDH50N50_F133 datasheet PDF. This datasheet also covers the FDH50N50 variant, as both devices belong to the same n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

Key Features

  • 48A, 500V, RDS(on) = 0.105Ω @VGS = 10 V.
  • Low gate charge ( typical 105 nC).
  • Low Crss ( typical 45 pF).
  • Fast switching.
  • 100% avalanche tested.
  • Improved dv/dt capability.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (FDH50N50_FairchildSemiconductor.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

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Other Datasheets by Fairchild (now onsemi)

Part Number Description
FDH50N50 500V N-Channel MOSFET
FDH5500 N-Channel UltraFET Power MOSFET
FDH5500_F085 N-Channel UltraFET Power MOSFET
FDH038AN08A1 N-Channel MOSFET
FDH047AN08A0 N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
FDH50N50_F133 / FDA50N50 500V N-Channel MOSFET FDH50N50_F133 / FDA50N50 500V N-Channel MOSFET October 2008 UniFETTM Features • 48A, 500V, RDS(on) = 0.105Ω @VGS = 10 V • Low gate charge ( typical 105 nC) • Low Crss ( typical 45 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor correction.