Datasheet4U Logo Datasheet4U.com

FIR4N65F - N-Channel MOSFET

Key Features

  • Drain Current.
  • ID= 4A@ TC=25℃.
  • Drain Source Voltage- : VDSS= 650V(Min).
  • Static Drain-Source On-Resistance : RDS(on) = 3.0Ω(Max).
  • Avalanche Energy Specified.
  • Fast Switching.
  • Simple Drive Requirements.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
FIR120N055PG N-Channel Enhancement Mode Power Mosfet First Semiconductor
FIR140N098PG Power Mosfet First Semiconductor
FIR140N098RG Power Mosfet First Semiconductor
FIR150N06PG N-Channel Enhancement Mode Power Mosfet First Semiconductor
FIR20N120TDG IGBT American First Semiconductor

Other Datasheets by Inchange Semiconductor

Part Number Description

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
isc N-Channel Mosfet Transistor INCHANGE Semiconductor FIR4N65F ·FEATURES ·Drain Current –ID= 4A@ TC=25℃ ·Drain Source Voltage- : VDSS= 650V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 3.0Ω(Max) ·Avalanche Energy Specified ·Fast Switching ·Simple Drive Requirements ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Designed for high efficiency switch mode power supply. ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS VGS ID IDM PD Tj Tstg Drain-Source Voltage 650 V Gate-Source Voltage-Continuous ±30 V Drain Current-Continuous 4 A Drain Current-Single Plused 16 A Total Dissipation @TC=25℃ 106 W Max.