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INCHANGE

FJD3076 Datasheet Preview

FJD3076 Datasheet

NPN Transistor

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isc Silicon NPN Power Transistor
INCHANGE Semiconductor
FJD3076
DESCRIPTION
·Low collector saturation voltage
·High current gain characteristics
·Fast-switching speed
·100% tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Power amplifier application
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
40
V
VCEO
Collector-Emitter Voltage
32
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
2
A
PC
Collector Power Dissipation
(Ta=25)
1
W
PC
Collector Power Dissipation
(Tc=25)
10
W
TJ
Junction Temperature
150
Tstg
Storage Temperature Range -55~150
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark




INCHANGE

FJD3076 Datasheet Preview

FJD3076 Datasheet

NPN Transistor

No Preview Available !

isc Silicon NPN Power Transistor
INCHANGE Semiconductor
FJD3076
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCE(sat)
Collector-Emitter Saturation Voltage IC= 2A; IB= 200mA
V(BR)CBO
Collector-Base Breakdown Voltage IC= 50uA; IB= 0
V(BR)CEO
Collector-Emitter Breakdown Voltage IC= 1mA; IB= 0
V(BR)EBO
Emitter-Base Breakdown Voltage
IE= 50uA; IC= 0
IEBO
Emitter Cutoff Current
VEB= 4V; IC= 0
ICBO
Collector Cutoff Current
VCB= 20V; IE= 0
hFE
DC Current Gain
IC= 0.5A; VCE= 3V
fT
Current-Gain—Bandwidth Product
IC= 500mA; VCE= 5V
COB
Output Capacitance
IE= 0; VCB= 10V; f= 1.0MHz
MIN TYP. MAX UNIT
0.8
V
40
V
32
V
5
V
1
uA
1
uA
130
390
100
MHz
50
pF
NOTICE
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not designed
for use in equipment which require specialized quality and/or reliability, or in equipment which
could have applications in hazardous environments, aerospace industry, or medical field. Please
contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark



Part Number FJD3076
Description NPN Transistor
Maker INCHANGE
Total Page 2 Pages
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