FJD3076
FJD3076 is NPN Transistor manufactured by Inchange Semiconductor.
DESCRIPTION
- Low collector saturation voltage
- High current gain characteristics
- Fast-switching speed
- 100% tested
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Power amplifier application
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
Collector Current-Continuous
Collector Power Dissipation (Ta=25℃)
Collector Power Dissipation (Tc=25℃)
Junction Temperature
℃
Tstg
Storage Temperature Range -55~150
℃ isc website：.iscsemi.
1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor
INCHANGE...
