FJD3076 Overview
FJD3076 FJD3076 Power Amplifier Applications Low Collector-Emitter Saturation Voltage 1 D-PACK 1. 32 40 5 1 1 390 0.8 V MHz pF Typ. Units V V V µA µA ©2001 Fairchild Semiconductor Corporation Rev.
NPN Epitaxial Silicon Transistor
| Part number | FJD3076 |
|---|---|
| Manufacturer | Fairchild (now onsemi) |
| File Size | 47.40 KB |
| Description | NPN Epitaxial Silicon Transistor |
| Datasheet | FJD3076_FairchildSemiconductor.pdf |
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FJD3076 FJD3076 Power Amplifier Applications Low Collector-Emitter Saturation Voltage 1 D-PACK 1. 32 40 5 1 1 390 0.8 V MHz pF Typ. Units V V V µA µA ©2001 Fairchild Semiconductor Corporation Rev.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
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FJD3076 | NPN Transistor | INCHANGE |
| Part Number | Description |
|---|---|
| FJD3305H1 | NPN Silicon Transistor |
| FJD5304D | High Voltage Fast Switching Transistor |
| FJD5555 | NPN Silicon Transistor |