FJD3076 Datasheet and Specifications PDF

The FJD3076 is a NPN Epitaxial Silicon Transistor.

Key Specifications

PackageDPAK
Mount TypeSurface Mount
Pins3
Max Frequency100 MHz
Height2.3 mm
Length6.6 mm
Width6.1 mm
Max Operating Temp150 °C
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Part NumberFJD3076 Datasheet
ManufacturerFairchild Semiconductor
Overview FJD3076 FJD3076 Power Amplifier Applications • Low Collector-Emitter Saturation Voltage 1 D-PACK 1. Base 2. Collector 3. Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C . 0.5A IC = 2A, IB = 0.2A VCE = 5V, IE = -0.5A, f = 100MHz VCB = 10V, IE = 0A, f = 1MHz 130 0.5 100 50 Min. 32 40 5 1 1 390 0.8 V MHz pF Typ. Max. Units V V V µA µA ©2001 Fairchild Semiconductor Corporation Rev. C1, December 2001 FJD3076 Typical Characteristics 2.0 1000 IB = 20mA IC[A], COLLEC.
Part NumberFJD3076 Datasheet
DescriptionNPN Transistor
ManufacturerInchange Semiconductor
Overview ·Low collector saturation voltage ·High current gain characteristics ·Fast-switching speed ·100% tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS. )CBO Collector-Base Breakdown Voltage IC= 50uA; IB= 0 V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA; IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 50uA; IC= 0 IEBO Emitter Cutoff Current VEB= 4V; IC= 0 ICBO Collector Cutoff Current VCB= 20V; IE= 0 hFE DC Current Gain IC= 0..

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