FJD3076 Description
FJD3076 FJD3076 Power Amplifier Applications Low Collector-Emitter Saturation Voltage 1 D-PACK 1. 32 40 5 1 1 390 0.8 V MHz pF Typ. Units V V V µA µA ©2001 Fairchild Semiconductor Corporation Rev.
FJD3076 is NPN Epitaxial Silicon Transistor manufactured by Fairchild .
| Manufacturer | Part Number | Description |
|---|---|---|
Inchange Semiconductor |
FJD3076 | NPN Transistor |
FJD3076 FJD3076 Power Amplifier Applications Low Collector-Emitter Saturation Voltage 1 D-PACK 1. 32 40 5 1 1 390 0.8 V MHz pF Typ. Units V V V µA µA ©2001 Fairchild Semiconductor Corporation Rev.