FJD3076 - NPN Transistor

Inchange Semiconductor

General Description

Low collector saturation voltage High current gain characteristics Fast-switching speed 100% tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier application ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PAR

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Datasheet Details

Part number	FJD3076
Manufacturer	Inchange Semiconductor
File Size	200.89 KB
Description	NPN Transistor
Datasheet	FJD3076 Datasheet

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isc Silicon NPN Power Transistor INCHANGE Semiconductor FJD3076 DESCRIPTION ·Low collector saturation voltage ·High current gain characteristics ·Fast-switching speed ·100% tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier application ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 32 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 2 A PC Collector Power Dissipation (Ta=25℃) 1 W PC Collector Power Dissipation (Tc=25℃) 10 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.