FJD3076 datasheet by Inchange Semiconductor.
| Part number | FJD3076 |
|---|---|
| Datasheet | FJD3076-INCHANGE.pdf |
| File Size | 200.89 KB |
| Manufacturer | Inchange Semiconductor |
| Description | NPN Transistor |
|
|
1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor FJD3076 TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 200mA V(BR)CBO Collector-Base Breakdown Voltage IC= 50uA; IB= 0 V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA;.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
FJD3076 | NPN Epitaxial Silicon Transistor | Fairchild Semiconductor |
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| FJD5553 | NPN Transistor |
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