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FJD5553 - NPN Transistor

General Description

Wide Safe Operation Area High Voltage Capability Fast-switching speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Electronic Ballast Switch mode power supplies ABSOLUTE MAXIMUM RATINGS(Ta=2

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isc Silicon NPN Power Transistor DESCRIPTION ·Wide Safe Operation Area ·High Voltage Capability ·Fast-switching speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Electronic Ballast ·Switch mode power supplies ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1050 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 14 V IC Collector Current-Continuous 3 A ICP Collector Current-Pulse 6 A PC Collector Power Dissipation (Ta=25℃) 1.25 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ FJD5553 isc website：www.iscsemi.