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FJD5555 - NPN Transistor

Description

Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 400V(Min.) Fast Speed Switching Wide safe operating Area 100% avalanche tested Minimum Lot-to-Lot variations for robust device Performance and reliable operation APPLICATIONS Designed for electronic ballast application

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isc Silicon NPN Power Transistor FJD5555 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 400V(Min.) ·Fast Speed Switching ·Wide safe operating Area ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device Performance and reliable operation APPLICATIONS ·Designed for electronic ballast application ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1050 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 14 V IC Collector Current-Continuous 5 A ICM Collector Current-Peak 10 A IB Base Current 2 A IBM Base Current-Peak PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 4 A 1.
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