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FJD5555 Datasheet Preview

FJD5555 Datasheet

NPN Transistor

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isc Silicon NPN Power Transistor
FJD5555
DESCRIPTION
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 400V(Min.)
·Fast Speed Switching
·Wide safe operating Area
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
Performance and reliable operation
APPLICATIONS
·Designed for electronic ballast application
ABSOLUTE MAXIMUM RATINGS (Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
1050
V
VCEO
Collector-Emitter Voltage
400
V
VEBO
Emitter-Base Voltage
14
V
IC
Collector Current-Continuous
5
A
ICM
Collector Current-Peak
10
A
IB
Base Current
2
A
IBM
Base Current-Peak
PC
Collector Power Dissipation
@TC=25
Tj
Junction Temperature
4
A
1.34
W
150
Tstg
Storage Temperature Range
-55~150
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-A
Thermal Resistance,Junction
Ambient
MAX
to 95
UNIT
/W
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark




INCHANGE

FJD5555 Datasheet Preview

FJD5555 Datasheet

NPN Transistor

No Preview Available !

isc Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
BVCEO Collector-Base Breakdown Voltage IC=500uA, IE=0
BVCEO Collector-Emitter Breakdown Voltage IC=5mA, IB=0
BVEBO Emitter-Base Breakdown Voltage
IE=500µA, IC=0
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 1A; IB= 0.2A
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 3.5A; IB= 1.0A
VBE(sat) Base-Emitter Saturation Voltage
IC= 3.5A; IB= 1.0A
hFE-1
DC Current Gain
IC= 10mA; VCE= 5V
hFE-2
DC Current Gain
IC= 0.8A; VCE= 3V
Cob
Output Capacitance
VCB=10V, f=1MHz
FJD5555
MIN TYP. MAX UNIT
1050
V
400
V
14
V
0.5
V
1.5
V
1.2
V
10
20
40
45
pF
Notice
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not designed
for use in equipment which require specialized quality and/or reliability, or in equipment which
could have applications in hazardous environments, aerospace industry, or medical field. Please
contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark



Part Number FJD5555
Description NPN Transistor
Maker INCHANGE
Total Page 2 Pages
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