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FJP13009 Datasheet Preview

FJP13009 Datasheet

Silicon NPN Power Transistor

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isc Silicon NPN Power Transistor
FJP13009
DESCRIPTION
·Collector–Emitter Sustaining Voltage
: VCEO(SUS) = 400V(Min.)
·Collector Saturation Voltage
: VCE(sat) = 1.5 (Max) @ IC= 8.0A
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for use in high-voltage, high-speed, power swit-
ching in inductive circuit, they are particularly suited for
115 and 220V switchmode applications such as switching
regulators,inverters,Motor controls,Solenoid/Relay drivers
and deflection circuits.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCEV
Collector-Emitter Voltage
700
V
VCEO Collector-Emitter Voltage
400
V
VEBO
Emitter-Base Voltage
9
V
IC
Collector Current-Continuous
12
A
ICM
Collector Current-peak
24
A
IB
Base Current
6
A
IBM
Base Current-Peak
PC
Collector Power Dissipation
TC=25
Ti
Junction Temperature
12
A
100
W
150
Tstg
Storage Temperature Range
-65~150
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX
1.25
UNIT
/W
isc Websitewww.iscsemi.com
1 isc & iscsemi is registered trademark




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FJP13009 Datasheet Preview

FJP13009 Datasheet

Silicon NPN Power Transistor

No Preview Available !

isc Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
TC =25unless otherwise specified
SYMBOL
PARAMETER
VCEO(SUS) Collector-Emitter Sustaining Voltage
VCE(sat)-1 Collector-Emitter Saturation Voltage
VCE(sat)-2 Collector-Emitter Saturation Voltage
VCE(sat)-3 Collector-Emitter Saturation Voltage
VBE(sat)-1 Base-Emitter Saturation Voltage
VBE(sat)-2 Base-Emitter Saturation Voltage
ICBO
Collector Cutoff Current
IEBO
Emitter Cutoff Current
hFE-1
DC Current Gain
hFE-2
DC Current Gain
CONDITIONS
IC= 10mA; IB= 0
IC= 5A ;IB= 1A
IC= 8A ;IB= 1.6A
IC= 12A ;IB= 3A
IC= 5A ;IB= 1A
IC= 8A ;IB= 1.6A
VCB= 700V; IE=0
VEB= 9V; IC= 0
IC= 5A; VCE= 5V
IC= 8A; VCE= 5V
hFE-1 Classifications
H1
H2
8-17
15-28
FJP13009
MIN MAX UNIT
400
V
1.0
V
1.5
V
3.0
V
1.2
V
1.6
V
1
mA
1
mA
8
40
6
30
NOTICE
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not
designed for use in equipment which require specialized quality and/or reliability, or in equipment
which could have applications in hazardous environments, aerospace industry, or medical
field. Please contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
isc Websitewww.iscsemi.com
2 isc & iscsemi is registered trademark


Part Number FJP13009
Description Silicon NPN Power Transistor
Maker INCHANGE
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