FJP5027 Overview
·Collector-Emitter Breakdown Voltage- : 1 isc & iscsemi is registered trademark INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification FJP5027 Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT BVEBO Emitter -Base Breakdown Voltage IE= 1mA;.
