FJP5027 - NPN Transistor

Inchange Semiconductor

General Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 800V(Min) High Switching Speed Wide SOA Minimum Lot-to-Lot variations for robust device performance and reliable operation ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1100 V VC

📥 Download Datasheet

FJP5027 npn transistor by Inchange Semiconductor - Datasheet Preview

Datasheet Details

Part number	FJP5027
Manufacturer	Inchange Semiconductor
File Size	210.53 KB
Description	NPN Transistor
Datasheet	FJP5027 Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
FJP5027	High Voltage and High Reliability	Fairchild Semiconductor

Other Datasheets by Inchange Semiconductor

Part Number	Description
FJP13009	Silicon NPN Power Transistor
FJP3305	Silicon NPN Transistor
FJPF5021	NPN Transistor
FJPF5027	NPN Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification FJP5027 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 800V(Min) ·High Switching Speed ·Wide SOA ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1100 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 3 A ICM Collector Current-Peak 10 A IB Base Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature 1.5 A 50 W 150 ℃ Tstg Storage Temperature -55~150 ℃ isc website：www.iscsemi.