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FJPF5027 Datasheet Preview

FJPF5027 Datasheet

NPN Transistor

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isc Silicon NPN Power Transistor
FJPF5027
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 800V(Min)
·High Switching Speed
·Wide SOA
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
1100
V
VCEO
Collector-Emitter Voltage
800
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
3
A
ICM
Collector Current-Peak
10
A
IB
Base Current-Continuous
PC
Collector Power Dissipation
@TC=25
TJ
Junction Temperature
1.5
A
40
W
150
Tstg
Storage Temperature
-55~150
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark




INCHANGE

FJPF5027 Datasheet Preview

FJPF5027 Datasheet

NPN Transistor

No Preview Available !

isc Silicon NPN Power Transistor
FJPF5027
ELECTRICAL CHARACTERISTICS
Tj=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
BVEBO Emitter -Base Breakdown Voltage IE= 1mA; IC= 0
BVCEO Collector- Emitter Breakdown Voltage IC= 5mA; IB= 0
BVCBO Collector- Base Breakdown Voltage IC= 1mA; IE= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 1.5A; IB= 0.3A
VBE(sat) Base-Emitter Saturation Voltage
IC= 1.5A; IB= 0.3A
ICBO
Collector Cutoff Current
VCB= 800V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
hFE
DC Current Gain
IC= 0.2A; VCE= 5V
hFE
DC Current Gain
IC= 1A; VCE= 5V
fT
Current-Gain—Bandwidth Product
IE= 0.2A; VCE= 10V
MIN TYP. MAX UNIT
7
V
800
V
1100
V
2.0
V
1.5
V
10 μA
10 μA
10
40
8
15
MHz
hFE-1 Classifications
N
R
O
10-20 15-30 20-40
Notice
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not designed
for use in equipment which require specialized quality and/or reliability, or in equipment which
could have applications in hazardous environments, aerospace industry, or medical field. Please
contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark



Part Number FJPF5027
Description NPN Transistor
Maker INCHANGE
Total Page 2 Pages
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FJPF5027 Datasheet PDF





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