The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
FJPF5027
FJPF5027
High Voltage and High Reliability
• High Speed Switching • Wide SOA
1
TO-220F
1.Base 2.Collector 3.Emitter
NPN Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
VCBO VCEO VEBO IC ICP IB PC TJ TSTG
Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current Collector Dissipation ( TC=25°C) Junction Temperature Storage Temperature
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
BVCBO BVCEO BVEBO VCEX(sus)
Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Sustaining Voltage
Test Condition
IC = 1mA, IE = 0 IC = 5mA, IB = 0 IE = 1mA, IC = 0 IC = 1.
FJPF5027 Datasheet
