FJPF5021
High Voltage and High Reliability
- High Speed Switching : t F = 0.1µs(Typ.)
- Wide SOA
TO-220F
1.Base 2.Collector 3.Emitter
NPN Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
Parameter
VCBO V CEO VEBO IC ICP IB PC TJ TSTG
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current Collector Dissipation (TC=25°C) Junction Temperature Storage Temperature
Value 800 500
7 5 10 2 40 150
- 55 ~ 150
Units V V V A A A W °C °C
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
Parameter
Test Condition
BVCBO BVCEO BVEBO VCEX (sus)
Collector-Base Breakdown Voltage Collector-Emitter Sustaining Voltage Emitter-Base Breakdown Voltage Collector-Emitter Sustaining Voltage
IC = 1m A, IE = 0 IC = 5m A, IB = 0 IE = 1m A, IC = 0 IC = 2.5A, IB1 = -IB2 = 1A L = 1m H, Clamped
ICBO IEBO h FE1 h FE2 VCE(sat) VBE(sat) Cob f T t ON t STG t F
Collector Cut-off...
