FKI06075 - N-Channel MOSFET

Features

Drain-source on-resistance: RDS(on) ≤ 8mΩ@10V.
Fast Switching Speed.
100% avalanche tested.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

INCHANGE

Datasheet Details

Part number	FKI06075
Manufacturer	Inchange Semiconductor
File Size	241.19 KB
Description	N-Channel MOSFET
Datasheet	FKI06075 Datasheet
Additional preview pages of the FKI06075 datasheet.

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Full PDF Text Transcription

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isc N-Channel MOSFET Transistor ·FEATURES · Drain-source on-resistance: RDS(on) ≤ 8mΩ@10V ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·High fast switching Power Supply ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 60 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 52 IDM Drain Current-Single Pulsed 104 PD Total Dissipation @TC=25℃ 40 Tj Max. Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(j-c) Junction-to-case thermal resistance MAX 3.125 UNIT ℃/W FKI06075 isc website：www.iscsemi.

Published: Oct 27, 2020 |