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FMH07N90E - N-Channel MOSFET

Key Features

  • Drain Current ID= 7A@ TC=25℃.
  • Drain Source Voltage- : VDSS= 900V(Min).
  • Static Drain-Source On-Resistance : RDS(on) = 2.0Ω(Max).
  • Fast Switching.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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isc N-Channel MOSFET Transistor FMH07N90E ·FEATURES ·Drain Current ID= 7A@ TC=25℃ ·Drain Source Voltage- : VDSS= 900V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 2.0Ω(Max) ·Fast Switching ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching regulators ·UPS (Uninterruptible Power Supply) ·DC-DC converters ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 900 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 7 A IDM Drain Current-Single Plused 28 A PD Total Dissipation @TC=25℃ 145 W Tj Max.