FQD50N06
Key Features
- Drain Source Voltage- : VDSS= 60V(Min)
- Static Drain-Source On-Resistance : RDS(on) = 22mΩ(Max)
- Fast Switching
- 100% avalanche tested
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
- Part: FQD50N06
- Description: N-Channel MOSFET
- Category: MOSFET
- Manufacturer: Inchange Semiconductor
- Size: 245.23 KB
Datasheets by Manufacturer
| Part Number | Manufacturer | Description |
|---|---|---|
| FQD50N06 | VBsemi | N-Channel MOSFET |