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isc N-Channel MOSFET Transistor
FQD50N06
·FEATURES ·Drain Source Voltage-
: VDSS= 60V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 22mΩ(Max) ·Fast Switching ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS ·High current , high speed switching ·Switch mode power supplies ·DC-DC converters for telecom, industrial,and lighting
equipment ideal for monitor’s B+ function
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage
60
V
VGS
Gate-Source Voltage-Continuous
±25
V
ID
Drain Current-Continuous
50
A
IDM
Drain Current-Single Plused
200
A
PD
Total Dissipation @TC=25℃
83
W
Tj
Max.
FQD50N06 Datasheet
