FQD50N06 Description
FQD50N06 N-Channel 60 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 60 RDS(on) () 0.012 at VGS = 10 V 0.013 at VGS = 4.5 V ID (A)a 50.
FQD50N06 Key Features
- 175 °C Junction Temperature
- TrenchFET® Power MOSFET
- Material categorization
FQD50N06 is N-Channel MOSFET manufactured by VBsemi.
| Manufacturer | Part Number | Description |
|---|---|---|
Inchange Semiconductor |
FQD50N06 | N-Channel MOSFET |
FQD50N06 N-Channel 60 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 60 RDS(on) () 0.012 at VGS = 10 V 0.013 at VGS = 4.5 V ID (A)a 50.