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FQD50N06
N-Channel 60 V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) 60
RDS(on) () 0.012 at VGS = 10 V 0.013 at VGS = 4.5 V
ID (A)a 50 45
FEATURES
• 175 °C Junction Temperature • TrenchFET® Power MOSFET • Material categorization:
D TO-252
GD S
G
S N-Channel MOSFET
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ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
Parameter
Symbol
Limit
Unit
Gate-Source Voltage
VGS
± 20
V
Continuous Drain Current (TJ = 175 °C)b
TC = 25 °C TC = 100 °C
ID
50 45a
Pulsed Drain Current
IDM
100
A
Continuous Source Current (Diode Conduction)
IS
50a
Avalanche Current
IAS
50
Single Avalanche Energy (Duty Cycle 1 %)
L = 0.1 mH
EAS
125
mJ
Maximum Power Dissipation
TC = 25 °C TA = 25 °C
PD
136 3b, 8.
FQD50N06 Datasheet
