Datasheet4U Logo Datasheet4U.com

FQD50N06 - N-Channel MOSFET

Key Features

  • Drain Source Voltage- : VDSS= 60V(Min).
  • Static Drain-Source On-Resistance : RDS(on) = 22mΩ(Max).
  • Fast Switching.
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
FQD50N06 N-Channel MOSFET VBsemi
FQD5N15 150V N-Channel MOSFET Fairchild Semiconductor
FQD5N20 200V N-Channel MOSFET Fairchild Semiconductor
FQD5N20L 200V N-Channel MOSFET Fairchild Semiconductor
FQD5N30 300V N-Channel MOSFET Fairchild Semiconductor

Other Datasheets by Inchange Semiconductor

Part Number Description
FQD50P06 P-Channel MOSFET
FQD13N10 N-Channel MOSFET
FQD7P20 P-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
isc N-Channel MOSFET Transistor FQD50N06 ·FEATURES ·Drain Source Voltage- : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 22mΩ(Max) ·Fast Switching ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·High current , high speed switching ·Switch mode power supplies ·DC-DC converters for telecom, industrial,and lighting equipment ideal for monitor’s B+ function ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 60 V VGS Gate-Source Voltage-Continuous ±25 V ID Drain Current-Continuous 50 A IDM Drain Current-Single Plused 200 A PD Total Dissipation @TC=25℃ 83 W Tj Max.