Download FQD50N06 Datasheet PDF
FQD50N06 page 2
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Datasheet Summary

isc N-Channel MOSFET Transistor - Features - Drain Source Voltage- : VDSS= 60V(Min) - Static Drain-Source On-Resistance : RDS(on) = 22mΩ(Max) - Fast Switching - 100% avalanche tested - Minimum Lot-to-Lot variations for robust device performance and reliable operation - APPLICATIONS - High current , high speed switching - Switch mode power supplies - DC-DC converters for tele, industrial,and lighting equipment ideal for monitor’s B+ function -...