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FQU10N20 - N-Channel MOSFET

Key Features

  • Drain Source Voltage- : VDSS= 200V(Min).
  • Low On-Resistance : RDS(on) = 0.36Ω(Max).
  • 100% Avalanche Tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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isc N-Channel MOSFET Transistor ·FEATURES ·Drain Source Voltage- : VDSS= 200V(Min) ·Low On-Resistance : RDS(on) = 0.36Ω(Max) ·100% Avalanche Tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Power factor correction ·Switched mode power supplies ·Uninterruptible Power Supply ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDSS Drain-Source Voltage VGS Gate-Source Voltage-Continuous ID Drain Current-Continuous IDM Drain Current-Single Plused PD Total Dissipation @TC=25℃ Tj Max. Operating Junction Temperature Tstg Storage Temperature ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case FQU10N20 VALUE 200 ±30 7.6 30 55 150 -55~150 UNIT V V A A W ℃ ℃ MAX 2.