900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf






INCHANGE

H1061 Datasheet Preview

H1061 Datasheet

NPN Transistor

No Preview Available !

isc Silicon NPN Power Transistor
DESCRIPTION
·DC Current Gain-
: hFE =60-200@ IC= 1A
·Low Collector Saturation Voltage
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for low frequency power amplifier applications
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
VCBO
Collector-Base Voltage
100
VCEO
Collector-Emitter Voltage
80
VEBO
Emitter-Base Voltage
5
IC
Collector Current-Continuous
4
ICM
Collector Current-Peak
8
PC
Collector Power Dissipation
@ TC=25
40
TJ
Junction Temperature
150
Tstg
Storage Temperature Range
-55~150
UNIT
V
V
V
A
A
W
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance, Junction to Case
MAX UNIT
5.0 /W
H1061
isc websitewww.iscsemi.cn
1 isc & iscsemi is registered trademark




INCHANGE

H1061 Datasheet Preview

H1061 Datasheet

NPN Transistor

No Preview Available !

isc Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA; IB= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE=1mA; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 0.2A
VBE(on) Base-Emitter On Voltage
IC= 1.0A; VCE= 4V
ICBO
Collector Cutoff Current
VCB= 80V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 4V; IC= 0
hFE-1
DC Current Gain
IC= 1A; VCE= 4V
hFE-2
DC Current Gain
IC= 0.1A; VCE= 4V
COB
Output Capacitance
IE=0; VCB= 20V; ftest= 1.0MHz
fT
Current-Gain—Bandwidth Product
IC= 0.5A; VCE= 5V
H1061
MIN TYP. MAX UNIT
80
V
5
V
1.0
V
1.5
V
0.1 mA
0.1 mA
60
200
35
40
pF
10
MHz
hFE-1 Classifications
B
C
60-120 100-200
Notice
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not designed
for use in equipment which require specialized quality and/or reliability, or in equipment which
could have applications in hazardous environments, aerospace industry, or medical field. Please
contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
isc websitewww.iscsemi.cn
2 isc & iscsemi is registered trademark



Part Number H1061
Description NPN Transistor
Maker INCHANGE
Total Page 2 Pages
PDF Download

H1061 Datasheet PDF





Similar Datasheet

1 H1061 NPN Transistor
INCHANGE
2 H1061 TRIPLE DIFFUSED SILICON NPN TRANSISTOR
PMC-Sierra
3 H1062 10/100BASE-TX QUAD PORT TRANSFORMER MODULES
Pulse
4 H1062NL 10/100BASE-TX QUAD PORT TRANSFORMER MODULES
Pulse
5 H1068 PNP SILICON TRANSISTOR
Huashan





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy