IPAN60R800CE
IPAN60R800CE is N-Channel MOSFET manufactured by Inchange Semiconductor.
EATURES
- With TO-220F package
- Low input capacitance and gate charge
- Reduced switching and conduction losses
- 100% avalanche tested
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
- APPLICATIONS
- Switching applications
INCHANGE Semiconductor
- ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
VGSS ID IDM
Gate-Source Voltage
Drain Current-Continuous @Tc=25℃
(VGS at 10V)
Tc=100℃
Drain Current-Single Pulsed
±30
8.4 5.3
Total Dissipation @TC=25℃
Tj
Max. Operating Junction Temperature
Tstg
Storage Temperature
-55~150
UNIT V V A A W ℃ ℃
- THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth(ch-c) Channel-to-case thermal resistance
Rth(ch-a) Channel-to-ambient thermal resistance
MAX 4.6 80
UNIT ℃/W ℃/W isc website：.iscsemi.cn
1 isc & iscsemi is registered trademark
Isc N-Channel MOSFET Transistor
INCHANGE...
