IPB65R190C7 - N-Channel MOSFET

INCHANGE

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Datasheet Details

Part number	IPB65R190C7
Manufacturer	INCHANGE
File Size	251.34 KB
Description	N-Channel MOSFET
Datasheet	IPB65R190C7-INCHANGE.pdf

IPB65R190C7 Product details

Description

Ultra low gate charge High peak current capability Improved transconductance ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 650 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 13 IDM Drain Current-Single Pulsed 49 PD Total Dissipation @TC=25℃ 72 Tj Max.Operating Junction Temperature -55~150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channe

Features

Static drain-source on-resistance: RDS(on) ≤0.19Ω.
Enhancement mode.
Fast Switching Speed.
100% avalanche tested.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Published: Oct 28, 2020 |