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IPB65R190C7 - N-Channel MOSFET

General Description

Ultra low gate charge High peak current capability Improved transconductance ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 650 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 13 IDM Drain Current-Single Pulsed 49 PD To

Key Features

  • Static drain-source on-resistance: RDS(on) ≤0.19Ω.
  • Enhancement mode.
  • Fast Switching Speed.
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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isc N-Channel MOSFET Transistor IPB65R190C7 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤0.19Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRIPTION ·Ultra low gate charge ·High peak current capability ·Improved transconductance ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 650 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 13 IDM Drain Current-Single Pulsed 49 PD Total Dissipation @TC=25℃ 72 Tj Max. Operating Junction Temperature -55~150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance MAX 1.