Datasheet4U Logo Datasheet4U.com

IPD088N06N3G - N-Channel MOSFET

Features

  • With TO-252(DPAK) packaging.
  • With low gate drive requirements.
  • Very high commutation ruggedness.
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

📥 Download Datasheet

Datasheet preview – IPD088N06N3G

📁 Similar Datasheet

Other Datasheets by INCHANGE

Full PDF Text Transcription

Click to expand full text
isc N-Channel MOSFET Transistor INCHANGE Semiconductor IPD088N06N3G ·FEATURES ·With TO-252(DPAK) packaging ·With low gate drive requirements ·Very high commutation ruggedness ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·LCD&PDP TV ·PC silverbox ·UPS and solar ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 60 VGSS ID IDM Gate-Source Voltage Drain Current-Continuous@TC=25℃ TC=100℃ Drain Current-Single Pulsed ±20 50 47 200 PD Total Dissipation 71 Tj Operating Junction Temperature -55~175 Tstg Storage Temperature -55~175 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance Rth(ch
Published: |