IPD60R280P7 mosfet equivalent, n-channel mosfet.
*Static drain-source on-resistance:
RDS(on)≤0.28Ω
*Enhancement mode:
*100% avalanche tested
*Minimum Lot-to-Lot variations for robust device
performance a.
and power ranges
*ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
600
VGS
.
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