IPD60R280P7 N-Channel MOSFET

INCHANGE

Description

isc N-Channel MOSFET Transistor IPD60R280P7，IIPD60R280P7 *.

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Datasheet Specifications

Part number: IPD60R280P7
Manufacturer: INCHANGE
File Size: 238.66 KB
Datasheet: IPD60R280P7-INCHANGE.pdf
Description: N-Channel MOSFET

Features

* Static drain-source on-resistance: RDS(on)≤0.28Ω
* Enhancement mode:
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation
* DESCRITION

Applications

* and power ranges
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 12 IDM Drain Current-Single Pulsed 36 PD Total Dissipation @TC=25℃ 53 Tj Max. Operating Junction Temperature 150

IPD60R280P7 Distributors

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IPD60R280P7 N-Channel MOSFET INCHANGE

INCHANGE IPD60R280P7-like datasheet