IPP057N06N3 Overview
Key Specifications
Package: TO-220
Mount Type: Through Hole
Pins: 3
Max Operating Temp: 175 °C
Description
Ideal for high frequency switching - Optimized technology for DC/DC converters - SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 60 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 80 IDM Drain Current-Single Pulsed 320 PD Total Dissipation @TC=25℃ 115 Tj Max. Operating Junction Temperature 175 Tstg Storage Temperature -55~175 UNIT V V A A W ℃ ℃ - SYMBOL PARAMETER Rth(ch-c) Channel-to-case Rth(ch-a) Channel-to-ambient MAX 1.3 62 UNIT ℃/W ℃/W isc website： 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor IPP057N06N3， IIPP057N06N3 TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BVDSS Drain-Source Breakdown Voltage VGS=0V; ID =1mA VGS(th) Gate Threshold Voltage VDS=VGS; ID =58μA RDS(on) Drain-Source On-Resistance VGS=10V; ID=80A IGSS Gate-Source Leakage Current VGS=20V;VDS=0V IDSS Drain-Source Leakage Current VDS=60V; VGS= 0V VSD Diode forward voltage IF=80A, VGS = 0 V MIN TYP MAX UNIT 60 V 2 4 V 5.7 mΩ 0.1 μA 1 μA 1.2 V NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification.
Key Features
- Static drain-source on-resistance: RDS(on) ≤5.7mΩ
- Enhancement mode
- Fast Switching Speed
- 100% avalanche tested
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
