The IPP057N06N3 is a Power-Transistor.
| Package | TO-220 |
|---|---|
| Mount Type | Through Hole |
| Pins | 3 |
| Max Operating Temp | 175 °C |
| Min Operating Temp | -55 °C |
| Part Number | IPP057N06N3 Datasheet |
|---|---|
| Manufacturer | Infineon |
| Overview | Ie\Q IPB054N06N3 G IPP057N06N3 G "%&$!"#™3 Power-Transistor Features Q#451<6? B8978 6B5AE5>3 I CG9D3 89>7 1>4 CI>3 B53 Q( @D9=9J54 D53 8>? 7I 6? B 3 ? >F5BD5BC Q H3 5<<5>D71D5 3 81B7. Q#451<6? B8978 6B5AE5>3 I CG9D3 89>7 1>4 CI>3 B53 Q( @D9=9J54 D53 8>? 7I 6? B 3 ? >F5BD5BC Q H3 5<<5>D71D5 3 81B75 HR 9H"[Z# @B? 4E3 D ( & Q' 3 81>>5< >? B=1<<5F5< Q 1F1<1>3 85 D5CD54 Q) 2 6B55 @<1D9>7 + ? " , 3 ? =@<91>D Q* E1<96954 13 3 ? B49>7 D? $ )# 6? BD1B75. |
| Part Number | IPP057N06N3 Datasheet |
|---|---|
| Description | N-Channel MOSFET |
| Manufacturer | Inchange Semiconductor |
| Overview |
·Ideal for high frequency switching ·Optimized technology for DC/DC converters
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
60
VGS
Gate-Source Voltage
±.
*Static drain-source on-resistance: RDS(on) ≤5.7mΩ *Enhancement mode *Fast Switching Speed *100% avalanche tested *Minimum Lot-to-Lot variations for robust device performance and reliable operation *DESCRIPTION *Ideal for high frequency switching *Optimized technology for DC/DC converters *ABSOLUT. |
| Seller | Inventory | Price Breaks | Buy |
|---|---|---|---|
| Chip One Stop | 460 | 1+ : 1.55 USD 10+ : 0.768 USD |
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| Rochester Electronics | 65742 | 100+ : 0.9745 USD 500+ : 0.8771 USD 1000+ : 0.8088 USD 10000+ : 0.7211 USD |
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| Farnell | 7 | 1+ : 2.26 GBP | View Offer |
| Part Number | Manufacturer | Description |
|---|---|---|
| IPP057N06N3G | Infineon | Power-Transistor |