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IPP180N10N3 Datasheet Preview

IPP180N10N3 Datasheet

N-Channel MOSFET

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isc N-Channel MOSFET Transistor
INCHANGE Semiconductor
IPP180N10N3IIPP180N10N3
·FEATURES
·Static drain-source on-resistance:
RDS(on) ≤18m
·Enhancement mode
·Fast Switching Speed
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION
·reliable device for use in a wide variety of applications
·ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
100
VGS
Gate-Source Voltage
±20
ID
Drain Current-Continuous
43
IDM
Drain Current-Single Pulsed
172
PD
Total Dissipation @TC=25
71
Tj
Max. Operating Junction Temperature
175
Tstg
Storage Temperature
-55~175
UNIT
V
V
A
A
W
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth(ch-c) Channel-to-case thermal resistance
Rth(ch-a) Channel-to-ambient thermal resistance
MAX
2.1
62
UNIT
/W
/W
isc websitewww.iscsemi.cn
1 isc & iscsemi is registered trademark




INCHANGE

IPP180N10N3 Datasheet Preview

IPP180N10N3 Datasheet

N-Channel MOSFET

No Preview Available !

isc N-Channel MOSFET Transistor
INCHANGE Semiconductor
IPP180N10N3IIPP180N10N3
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
BVDSS
Drain-Source Breakdown Voltage VGS=0V; ID =1mA
VGS(th)
Gate Threshold Voltage
VDS=VGS; ID =33μA
RDS(on)
Drain-Source On-Resistance
VGS=10V; ID=33A
IGSS
Gate-Source Leakage Current
VGS=20V;VDS=0V
IDSS
Drain-Source Leakage Current
VDS=100V; VGS= 0V
VSD
Diode forward voltage
IF=33A, VGS = 0 V
MIN TYP MAX UNIT
100
V
2.0
3.5
V
18
mΩ
0.1
μA
1
μA
1.2
V
NOTICE
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not designed
for use in equipment which require specialized quality and/or reliability, or in equipment which
could have applications in hazardous environments, aerospace industry, or medical field. Please
contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
isc websitewww.iscsemi.cn
2 isc & iscsemi is registered trademark


Part Number IPP180N10N3
Description N-Channel MOSFET
Maker INCHANGE
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