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IPP60R330P6 Datasheet

N-channel MOSFET

Manufacturer: Inchange Semiconductor

IPP60R330P6 Overview

·Provide all benefits of a fast switching super junction MOS while not sacrificing ease of use · RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 12 IDM Drain Current-Single Pulsed 33 PD Total Dissipation @TC=25℃ 93 Tj Max. ID =1mA VGS(th) Gate Threshold Voltage VDS=VGS; ID =0.37mA RDS(on) Drain-Source On-Resistance VGS=10V;.

IPP60R330P6 Key Features

  • Static drain-source on-resistance
  • DESCRIPTION -Provide all benefits of a fast switching super junction MOS while not

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