IPW60R080P7 Overview
Key Features
- Static drain-source on-resistance: RDS(on)≤80mΩ
- Enhancement mode
- 100% avalanche tested
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
- Fast switching
| Part | IPW60R080P7 |
|---|---|
| Description | N-Channel MOSFET |
| Category | MOSFET |
| Manufacturer | Inchange Semiconductor |
| Size | 238.83 KB |
Related Datasheets
| Part Number | Manufacturer | Description |
|---|---|---|
| IPW60R080P7 | Infineon | MOSFET |