isc N-Channel MOSFET Transistor
INCHANGE Semiconductor
IPW60R080P7
IIPW60R080P7
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP MAX UNIT
BVDSS
Drain-Source Breakdown Voltage VGS=0V; ID=1mA
600
VGS(th)
Gate Threshold Voltage
VDS=VGS; ID=0.59mA
3
V
4
V
RDS(on)
Drain-Source On-Resistance
VGS=10V; ID=11.8A
80
mΩ
IGSS
Gate-Source Leakage Current
VGS= 20V; VDS=0V
IDSS
Drain-Source Leakage Current
VDS=600V; VGS= 0V
VSD
Diode forward voltage
IF=11.8A, VGS = 0V
0.1
μA
1
μA
V
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notification. The information contained herein is presented only as a guide for the applications of
our products.
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