IPW60R099P6
Overview
- Static drain-source on-resistance: RDS(on)≤99mΩ
- Enhancement mode:
- 100% avalanche tested
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
- DESCRITION
- Fast switching
- Part: IPW60R099P6
- Description: N-Channel MOSFET
- Category: MOSFET
- Manufacturer: Inchange Semiconductor
- Size: 238.57 KB
Datasheets by Manufacturer
- IPW60R099P6 — Infineon — MOSFET
- IPW60R099P7 — Infineon — MOSFET
- IPW60R099CPA — Infineon — Power Transistor
- IPW60R099C6 — Infineon — MOSFET
- IPW60R099CS — Infineon — Power Transistor