IPW60R099P7
Key Features
- Static drain-source on-resistance: RDS(on)≤99mΩ
- Enhancement mode:
- 100% avalanche tested
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
- DESCRITION
- Fast Switching
- Part: IPW60R099P7
- Description: N-Channel MOSFET
- Category: MOSFET
- Manufacturer: Inchange Semiconductor
- Size: 238.34 KB
Datasheets by Manufacturer
| Part Number | Manufacturer | Description |
|---|---|---|
| IPW60R099P7 | Infineon | MOSFET |
| IPW60R099P6 | Infineon | MOSFET |
| IPW60R099C6 | Infineon | MOSFET |
| IPW60R099CS | Infineon | Power Transistor |