Datasheet4U Logo Datasheet4U.com

IPW65R280E6 - N-Channel MOSFET

Key Features

  • Static drain-source on-resistance: RDS(on)≤280mΩ.
  • Enhancement mode:.
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
IPW65R280E6 Power Transistor Infineon Technologies
IPW65R280C6 Power Transistor Infineon Technologies
IPW65R018CFD7 650V MOSFET Infineon
IPW65R018CM8 650V MOSFET Infineon
IPW65R019C7 Power Transistor Infineon Technologies

Other Datasheets by Inchange Semiconductor

Part Number Description
IPW65R280C6 N-Channel MOSFET
IPW65R037C6 N-Channel MOSFET
IPW65R041CFD N-Channel MOSFET
IPW65R045C7 N-Channel MOSFET
IPW65R065C7 N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on)≤280mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Fast Switching ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 650 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 13.8 IDM Drain Current-Single Pulsed 39 PD Total Dissipation @TC=25℃ 104 Tj Max. Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(j-c) Channel-to-case thermal resistance Rth(j-a) Channel-to-ambient thermal resistance MAX 1.2 62 UNIT ℃/W ℃/W IPW65R280E6 IIPW65R280E6 isc website：www.iscsemi.