IRF60R217 mosfet equivalent, n-channel mosfet.
*Static drain-source on-resistance:
RDS(on)≤9.9mΩ
*Enhancement mode:
*100% avalanche tested
*Minimum Lot-to-Lot variations for robust device
performance a.
*ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
60
VGS
Gate-Source Volta.
Image gallery
TAGS
Download (Size : 238.31KB)