Datasheet4U Logo Datasheet4U.com

IRF9530PBF Datasheet P-channel MOSFET

Manufacturer: Inchange Semiconductor

Overview: isc P-Channel MOSFET Transistor ·.

General Description

·Power management in notebook computer ·Portable equipment and battery powered systems ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage -100 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous -12 IDM Drain Current-Single Pulsed -48 PD Total Dissipation @TC=25℃ 85 Tj Max.

Operating Junction Temperature 175 Tstg Storage Temperature -55~175 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(j-c) Channel-to-case thermal resistance Rth(j-a) Channel-to-ambient thermal resistance MAX 1.76 62 UNIT ℃/W ℃/W IRF9530PBF isc website:www.iscsemi.cn 1 isc & iscsemi is registered trademark isc P-Channel MOSFET Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BVDSS Drain-Source Breakdown Voltage VGS=0V;

ID= -250μA VGS(th) Gate Threshold Voltage VDS=VGS;

Key Features

  • Static drain-source on-resistance: RDS(on)≤0.3Ω.
  • Enhancement mode:.
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

IRF9530PBF Distributor