Kexin Electronics IRF9530
P-Channel MOSFET
FEATURES
● VDS (V) =-100V● ID =-13 A (VGS =-10V)
● RDS(ON) < 205mΩ (VGS =-10V)
● RDS(ON) < 300mΩ (VGS =-4.5V)
●
ABSOLUTE MAXIMUM RATINGS
Ta = 25℃ 13.08 ± 0.20 (1.00) 9.20 ± 0.20 (1.46) (45 ) (3.00) (3.70) 15.90 ± 0.20 18.95MAX. 10.08 ± 0.30 1.27 ± 0.10 1.52 ± 0.10 123 2.54TYP [2.54 ± 0.20 ] 0.80 ± 0.10 2.54TYP [2.54 ± 0.20 ] 10.00 ± 0.20 0.50 +0.10 –0.05 2.40 ± 0.20 1 GATE 2 DRAIN 3 SOURCE Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Power Dissipation Tc = 25℃ Junction Temperature Junction Storage Temperature Range Symbol Rating Unit VDS -100 V VGS ±25 ID -13 A IDM -32 PD 50 W TJ 150 ℃ Tstg -55 to 150●
ELECTRICAL CHARACTERISTICS
Ta = 25℃ Parameter Symbol Drain-Source Breakdown Voltage VDSS Zero Gate Voltage Drain Current IDSS Gate-Body leakage current Gate Threshold Voltage IGSS VGS(th) Static Drain-Source On-Resistance RDS(On) Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate Source Charge Gat...