Datasheet4U Logo Datasheet4U.com

IRF9530 - P-Channel MOSFET

Key Features

  • VDS (V) =-100V.
  • ID =-13 A (VGS =-10V).
  • RDS(ON) ＜ 205mΩ (VGS =-10V).
  • RDS(ON) ＜ 300mΩ (VGS =-4.5V).
  • Absolute Maximum Ratings Ta = 25℃ 13.08 ± 0.20 (1.00) 9.20 ± 0.20 (1.46) (45 ) (3.00) (3.70) 15.90 ± 0.20 18.95MAX. 10.08 ± 0.30 1.27 ± 0.10 1.52 ± 0.10 123 2.54TYP [2.54 ± 0.20 ] 0.80 ± 0.10 2.54TYP [2.54 ± 0.20 ] 10.00 ± 0.20 0.50 +0.10.
  • 0.05 2.40 ± 0.20 1 GATE 2 DRAIN 3 SOURCE Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Curr.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
IRF9530 P-Channel Power MOSFET Intersil Corporation
IRF9530 Power MOSFET International Rectifier
IRF9530 P-Channel Power MOSFETs Fairchild Semiconductor
IRF9530 Power MOSFET Vishay
IRF9530 P-Channel MOSFET INCHANGE

Other Datasheets by Kexin Semiconductor

Part Number Description
IRF9540 P-Channel MOSFET
IRF1404Z N-Channel MOSFET
IRF3205 Power MOSFET
IRF3808S N-Channel MOSFET
IRF540NS N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
DIP Type MOSFET P-Channel MOSFET IRF9530 (KRF9530) TO-220 9.90 ± 0.20 (8.70) ø3.60 ± 0.10 4.50 ± 0.20 1.30 +0.10 –0.05 2.80 ± 0.10 (1.70) 1.30 ± 0.10 ■ Features ● VDS (V) =-100V ● ID =-13 A (VGS =-10V) ● RDS(ON) ＜ 205mΩ (VGS =-10V) ● RDS(ON) ＜ 300mΩ (VGS =-4.5V) ■ Absolute Maximum Ratings Ta = 25℃ 13.08 ± 0.20 (1.00) 9.20 ± 0.20 (1.46) (45 ) (3.00) (3.70) 15.90 ± 0.20 18.95MAX. 10.08 ± 0.30 1.27 ± 0.10 1.52 ± 0.10 123 2.54TYP [2.54 ± 0.20 ] 0.80 ± 0.10 2.54TYP [2.54 ± 0.20 ] 10.00 ± 0.20 0.50 +0.10 –0.05 2.40 ± 0.