Inchange Semiconductor IRF9530
P-Channel MOSFET
| Part No. | IRF9530 |
|---|---|
| Datasheet | IRF9530 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | P-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
●-12A，-100V●Single pulse avalanche energy rated
●Static Drain-Source On-Resistance: RDS(on) =0.3Ω(Max)
●SOA is power dissipation limited
●Nanosecond switching speeds
●Linear transfer characteristics
●Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION
●The power MOSFET is designed for applications such as switching regulators,switching convertors,motor drivers,relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power
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ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) -100 V VGS Gate-Source Voltage ±20 V ID Drain Current-continuous@ TC=25℃ -12 A IDM Drain Current-Single Plused -48 A Ptot Total Dissipation@TC=25℃ 75 W Tj Max. Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL PARAMETER -55~150 ℃ MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.67 ℃/W Rth j-a Thermal Resistance,J...
