IRF9530 Datasheet | Inchange Semiconductor

isc P-Channel Mosfet Transistor INCHANGE Semiconductor Features - -12A，-100V - Single pulse avalanche energy rated - Static Drain-Source On-Resistance: RDS(on) =0.3Ω(Max) - SOA is power dissipation limited - Nanosecond switching speeds - Linear transfer characteristics - Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION - The power MOSFET is designed for applications such as switching regulators,switching convertors,motor drivers,relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power -...