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IRFB4110G N-Channel MOSFET

IRFB4110G Description

isc N-Channel MOSFET Transistor IRFB4110G， IIRFB4110G *.

IRFB4110G Features

* Static drain-source on-resistance: RDS(on) ≤4.5mΩ
* Enhancement mode
* Fast Switching Speed
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation
* DESCRITION

IRFB4110G Applications

* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 100 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 180 IDM Drain Current-Single Pulsed 670 PD Total Dissipation @TC=25℃ 370 Tj Max. Operating Junction Temperature 175 Tstg Storage

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Datasheet Details

Part number
IRFB4110G
Manufacturer
INCHANGE
File Size
241.00 KB
Datasheet
IRFB4110G-INCHANGE.pdf
Description
N-Channel MOSFET

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N-Channel MOSFET INCHANGE
INCHANGE IRFB4110G-like datasheet