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IRFB4212 N-Channel MOSFET

IRFB4212 Description

isc N-Channel MOSFET Transistor IRFB4212，IIRFB4212 *.

IRFB4212 Features

* Static drain-source on-resistance: RDS(on) ≤72.5mΩ
* Enhancement mode
* Fast Switching Speed
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation
* DESCRITION

IRFB4212 Applications

* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 100 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 18 IDM Drain Current-Single Pulsed 57 PD Total Dissipation @TC=25℃ 60 Tj Max. Operating Junction Temperature 175 Tstg Storage Tem

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Datasheet Details

Part number
IRFB4212
Manufacturer
INCHANGE
File Size
240.45 KB
Datasheet
IRFB4212-INCHANGE.pdf
Description
N-Channel MOSFET

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N-Channel MOSFET INCHANGE
INCHANGE IRFB4212-like datasheet