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IRFB4410 N-Channel MOSFET

IRFB4410 Description

isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRFB4410，IIRFB4410 *.

IRFB4410 Features

* Static drain-source on-resistance: RDS(on) ≤10mΩ
* Enhancement mode
* Fast Switching Speed
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation
* DESCRITION

IRFB4410 Applications

* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 100 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 88 IDM Drain Current-Single Pulsed 380 PD Total Dissipation @TC=25℃ 2001 Tj Max. Operating Junction Temperature 175 Tstg Storage

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Datasheet Details

Part number
IRFB4410
Manufacturer
INCHANGE
File Size
241.54 KB
Datasheet
IRFB4410-INCHANGE.pdf
Description
N-Channel MOSFET

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N-Channel MOSFET INCHANGE
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