IRFB4610 - N-Channel MOSFET

Datasheet Summary

Features

br>.
Static drain-source on-resistance: RDS(on) ≤14mΩ.
Enhancement mode.
Fast Switching Speed.
100% avalanche tested.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

INCHANGE

📥 Download Datasheet

Datasheet Details

Part number	IRFB4610
Manufacturer	INCHANGE
File Size	241.66 KB
Description	N-Channel MOSFET
Datasheet	IRFB4610 Datasheet
Additional preview pages of the IRFB4610 datasheet.

📁 Similar Datasheet

IRFB4610 - HEXFET Power MOSFET (International Rectifier)
IRFB4610PBF - HEXFET Power MOSFET (International Rectifier)
IRFB4615PBF - N-Channel HEXFET Power MOSFET (International Rectifier)
IRFB4620PbF - HEXFET Power MOSFET (International Rectifier)
IRFB4019PBF - DIGITAL AUDIO MOSFET (International Rectifier)
IRFB4020PBF - DIGITAL AUDIO MOSFET (International Rectifier)
IRFB4103PBF - DIGITAL AUDIO MOSFET (International Rectifier)
IRFB4110 - N-Channel MOSFET Transistor (Inchange Semiconductor)
IRFB4110 - HEXFET Power MOSFET (International Rectifier)
IRFB4110GPbF - Power MOSFET (International Rectifier)

Other Datasheets by INCHANGE

IRFB4615 - N-Channel MOSFET
IRFB4620 - N-Channel MOSFET
IRFB4019 - N-Channel MOSFET
IRFB4020 - N-Channel MOSFET
IRFB4110G - N-Channel MOSFET
IRFB4115 - N-Channel MOSFET
IRFB4115G - N-Channel MOSFET
IRFB4127 - N-Channel MOSFET

Full PDF Text Transcription

Click to expand full text

isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRFB4610，IIRFB4610 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤14mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·reliable device for use in a wide variety of applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 100 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 73 IDM Drain Current-Single Pulsed 290 PD Total Dissipation @TC=25℃ 190 Tj Max.

Published: Oct 3, 2020 |