Full PDF Text Transcription for IRFIZ34G (Reference)
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IRFIZ34G. For precise diagrams, and layout, please refer to the original PDF.
S=10V ·Enhancement mode: Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.25mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Voltage Regulators ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 60 V VGS Gate-Source Voltage ±20 V ID Drain Current-Continuous 20 A IDM Drain Current-Single Pulsed 80 A PD Total Dissipation @TC=25℃ 42 W Tj Max. Operating Junction Temperature -55~175 ℃ Tstg Storage Temperature -55~175 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance MAX 3.6 UNIT ℃/W
IRFIZ34G Datasheet
