| Part Number | IRFIZ34G Datasheet |
|---|---|
| Manufacturer | International Rectifier |
| Overview | Datasheet pdf - Datasheet pdf - Datasheet pdf - ww. . |
IRFIZ34G Datasheet and Specifications PDF
The IRFIZ34G is a HEXFET POWER MOSFET.
Key Specifications
| Package | TO-220-3 |
|---|---|
| Mount Type | Through Hole |
| Pins | 3 |
| Height | 9.8 mm |
| Length | 10.63 mm |
| Width | 4.83 mm |
| Max Operating Temp | 175 °C |
| Min Operating Temp | -55 °C |
| Part Number | IRFIZ34G Datasheet |
|---|---|
| Description | Power MOSFET |
| Manufacturer | Vishay |
| Overview |
Third generation power MOSFETs from Vishay provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.
The TO-220 FULLPAK eli.
* Isolated package * High voltage isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) * Sink to lead creepage distance = 4.8 mm * 175 °C operating temperature * Dynamic dV/dt rating * Low thermal resistance * Material categorization: for definitions of compliance please see DESCRIPT. |
| Part Number | IRFIZ34G Datasheet |
|---|---|
| Description | N-Channel MOSFET |
| Manufacturer | Inchange Semiconductor |
| Overview |
iscN-Channel MOSFET Transistor
IRFIZ34G
·FEATURES ·Low drain-source on-resistance:
RDS(ON) ≤50mΩ @VGS=10V ·Enhancement mode:
Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.25mA) ·100% avalanche tested ·Minimum.
*Low drain-source on-resistance: RDS(ON) ≤50mΩ @VGS=10V *Enhancement mode: Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.25mA) *100% avalanche tested *Minimum Lot-to-Lot variations for robust device performance and reliable operation *DESCRITION *Switching Voltage Regulators *ABSOLUTE MAXIMUM RATINGS(Ta=25℃. |