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IRFIZ34V - Power MOSFET

Datasheet Summary

Description

Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

Features

  • H . 3.30 (.130) 3.10 (.122) -B 1 3.70 (.54 0) 1 3.50 (.53 0) C D A 1.40 (.05 5) 3X 1.05 (.04 2) 2.54 (.1 00) 2X 3X 0.9 0 (.0 35) 0.7 0 (.0 28) 0.25 (.01 0) M A M B 3X 0.48 (.0 19) 0.44 (.0 17) B 2.85 (.112) 2.65 (.104) M IN IM U M C RE E P A G E D IS T A N C E B E TW E E N A -B -C -D = 4.80 (.1 89 ) Part Marking Information TO-220 Full-pak E X A M P LE : TH IS IS A N IR F I8 4 0 G W IT H A S S E M B LY LO T COD E E401 A IN T E R N A T IO N A L R E C T IF IE R LOGO A SS E M B LY LOT COD E.

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Full PDF Text Transcription

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PD - 94053 IRFIZ34V HEXFET® Power MOSFET Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Optimized for SMPS Applications Description l D VDSS = 60V RDS(on) = 28mΩ G S ID = 20A Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 Fullpak eliminates the need for additional insulating hardware in commercial-industrial applications.
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