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IRFIZ34VPBF - HEXFET Power MOSFET

Datasheet Summary

Description

Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

Features

  • es "L ead-F ree" D AT E CO D E Y E AR 9 = 1 9 9 9 W E E K 24 L IN E K Data and specifications subject to change without notice. This product has been designed and qualified for the industrial market. Qualification Standards can be found on IR’s Web site. IR WORLD.

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Full PDF Text Transcription

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PD - 94841 IRFIZ34VPbF Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Optimized for SMPS Applications l Lead-Free Description l HEXFET® Power MOSFET D VDSS = 60V RDS(on) = 28mΩ G S ID = 20A Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
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