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IRFP15N60L Datasheet Preview

IRFP15N60L Datasheet

N-Channel MOSFET

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isc N-Channel MOSFET Transistor
DESCRIPTION
·Drain Current –ID=40A@ TC=25
·Drain Source Voltage-
: VDSS= 600V(Min)
·Static Drain-Source On-Resistance
: RDS(on) =0.46Ω(Max)
·High Power,High Speed Applications
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Switching power supplies
·UPS
·Motor controls
·High energy pulse circuits.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL ARAMETER
VALUE UNIT
VDSS
Drain-Source Voltage (VGS=0)
600
V
VGS
Gate-Source Voltage
±30
V
ID
Drain Current-continuous@ TC=25
15
A
Ptot
Total Dissipation@TC=25
280
W
Tj
Max. Operating Junction Temperature
150
Tstg
Storage Temperature Range
-55~150
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX UNIT
0.83 /W
IRFP15N60L
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark




INCHANGE

IRFP15N60L Datasheet Preview

IRFP15N60L Datasheet

N-Channel MOSFET

No Preview Available !

isc N-Channel Mosfet Transistor
·ELECTRICAL CHARACTERISTICS (TC=25)
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage VGS=0; ID=250µA
VGS(TH) Gate Threshold Voltage
VDS= VGS; ID=250µA
RDS(ON) Drain-Source On-stage Resistance VGS=10V; ID=9A
IGSS
Gate Source Leakage Current
VGS=±30V;VDS=0
IDSS
Zero Gate Voltage Drain Current
VDS=600V; VGS=0
VSD
Diode Forward Voltage
IS=15A; VGS=0
IRFP15N60L
MIN TYPE
MAX
UNI
T
600
V
3.0
5.0
V
0.46
Ω
±100 nA
50
uA
1.5
V
NOTICE
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not
designed for use in equipment which require specialized quality and/or reliability, or in equipment
which could have applications in hazardous environments, aerospace industry, or medical
field. Please contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark


Part Number IRFP15N60L
Description N-Channel MOSFET
Maker INCHANGE
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